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Saturday, February 8, 2020 | History

1 edition of Amorphous and Crystalline Silicon Carbide II found in the catalog.

Amorphous and Crystalline Silicon Carbide II

Recent Developments Proceedings of the 2nd International Conference, Santa Clara, CA, December 15-16, 1988

by Mahmud M. Rahman

  • 168 Want to read
  • 38 Currently reading

Published by Springer Berlin Heidelberg in Berlin, Heidelberg .
Written in English

    Subjects:
  • Polymers,
  • Electronics,
  • Crystallography,
  • Physics,
  • Surfaces (Physics)

  • About the Edition

    This comprehensive survey presents the latest results of studies of SiC in its amorphous, polycrystalline and microcrystalline forms. New methods of preparation and characterization are explained and devices and applications described, for example: - excimer laser processing of SiC - low temperature epitaxial growth of cubic SiC using a gas source MBE process - the use of NaOH-KOH eutectic etching to reveal crystalline defects in -SiC - results of investigations of microstructure and interfaces of a-SiC with c-SiC - new devices: SiC MOSFETs and buried gate JFETs - blue LEDs using 6H-SiC bulk crystals - a new process for SiC/Si HBTs - high operating-temperature and opto-electronic applications The newly emerging technology of diamond thin films is also discussed.

    Edition Notes

    Statementedited by Mahmud M. Rahman, Cary Y.-W. Yang, Gary L. Harris
    SeriesSpringer Proceedings in Physics -- 43, Springer proceedings in physics -- 43.
    ContributionsYang, Cary Y.-W, Harris, Gary L.
    Classifications
    LC ClassificationsQD901-999
    The Physical Object
    Format[electronic resource] :
    Pagination1 online resource (x, 232 pages 197 illustrations).
    Number of Pages232
    ID Numbers
    Open LibraryOL27016409M
    ISBN 103642750508, 3642750486
    ISBN 109783642750502, 9783642750489
    OCLC/WorldCa851811201

    Extensive research has been done on growth of SiC films at low or high temperature process aiming to produce high quality films. BC-BJ cells without a front p—n junction require high-quality monocrystalline substrates with high minority carrier lifetimes. Soukup Collects 13 writings of the distinguished Jesuit scholar on topics ranging from Ong's study of 'Wit and mystery: a reevaluation in medieval Latin hymnody,' to reflections on faith and cosmos and information-communication interactions. Liu et al. The solar cell fill factor and efficiency are calculated using the following equations. In addition, it is also noticed that co-sputtered SixCy films grown at high negative substrate bias between and V are free of oxygen contamination.

    Amorphous silicon-based TFTs are by far the most common, due to their lower production cost, whereas polycrystalline silicon TFTs are more costly and much more difficult to produce. Although on the surface Creative Initiative appears to have been a major departure from mainline religion, in fact it was in some ways also a continuation and even a rejuvenation of traditional American religious values. Micro-sized SiC particles and whiskers are commonly used as reinforcement materials for ceramics, metals and alloys for various structural and tribological applications [ 67 ]. Marx and Ethics Philip J. Yushin et al. Phosphorous diffusion techniques the exploit gettering effects to reduce impurity densities in a silicon wafer and thereby improve minority carrier lifetime have been demonstrated to be effective provided diffusion is conducted under phosphorus supersaturation conditions doping level above the solid solubility in silicon [33—35].

    Sputtering process presents poor sidewall coverage due to the significant distance between the target and the substrate. Protocrystalline silicon is often used to optimize the open circuit voltage of a-Si photovoltaics. The replacement of the conventional bulk materials by thin films allows the fabrication of devices with smaller volume and weight, higher flexibility besides lower cost and good performance. In general, the use of amorphous SiC films has been preferred due to relatively their low growth temperature, which guarantees a larger compatibility with silicon-based technology Hatalis, The contributions to this volume report recent developments and trends in the field.


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Amorphous and Crystalline Silicon Carbide II book

High-efficiency This is probably due to the intense compression of the atoms occurring during their formation, resulting in more condensed structure. The control of N2 gas flow during deposition process has been shown as a convenient and effective way to change the electrical properties of SiC films in order to obtain films with desired electrical conductivities for each application type.

It was observed that at a low microwave power of W the band gap of the SiC:H film decreases as the diborane flow increases, whereas the films deposited at a high microwave power of W remains relatively unaffected throughout the entire range of diborane levels investigated.

The BSF regions are usually formed by firing screen-printed aluminum paste in a belt furnace. Figure 4 Schematics of various crystalline solar cell structures.

The use of N2 as doping gas is advantageous due to non-toxicity, low cost and high efficiency Fraga, The film resistivity, measured at room temperature by a standard four-point probe system, was of 0.

Therefore, a rich set of behavior can be obtained by systematic control between glassy and crystalline states. Stishovite, the higher-pressure form, in contrast, has a rutile -like structure where silicon is 6-coordinate. The cost of PV production is roughly divided in half between solar cell module production and balance-of-system fabrication, which includes the inverter, cables and installation.

Once deposited, a-Si can be doped in a fashion similar to c-Si, to form p-type or n-type layers and ultimately to form electronic devices. The improvements in research-cell efficiencies achieved for various kinds of solar cells over the past 30 years are shown in Figure 3.

Polycrystalline cells, on the other hand, are made from square silicon substrates cut from polycrystalline ingots grown in quartz crucibles. This has motivated several studies on how the hydrogen incorporation affects the properties of SiC films and on the applications of a-SiC:H films in devices.

The efficiencies of both monocrystalline and polycrystalline PV cells will be improved in the future through the introduction of high-efficiency structures.

Conclusion: If you're looking to get the lowest cost system, then amorphous is the way to go. Dimeric silicon dioxide, SiO2 2 has been prepared by reacting O2 with matrix isolated dimeric silicon monoxide, Si2O2.

Therefore, n-type doping of SiC is commonly achieved by the use of nitrogen or phosphorus whereas p-type is by aluminium or boron. Regarding the unintentional contamination by oxygen, the sources have been more discussed in the literature.

If your restricted in area and your looking to produce the most power in the area you have to work with, the crystalline cells are the definite choice.

How do we control GB migration? Wu et al.obvious characteristics of single crystal silicon and amorphous silicon dioxide, i.e., quartz glass: 1) silicon is crystalline, quartz glass is amorphous, 2) silicon conducts heat and electricity reasonably well, quartz glass is a poor conductor of both, 3) silicon is an silicon carbide may be useful if.

Amorphous and Crystalline Silicon Carbide IV

The optical properties of amorphous silicon (a-Si) are sensitive to the preparation conditions and doping with hydrogen.

The most widely studied polytype of silicon carbide (SiC) is denoted as SiC II or 6H SiC. This chapter summarizes the contents of the book, Handbook of Optical Constants of Solids (HOC II).

The first part of the. Faculty Book Gallery. The Faculty Book Gallery is the collection of books that are featured at Santa Clara University's Faculty New Publications reception which celebrates the accomplishments of SCU faculty who have published a book, produced a film or composed works of music in the past year.

Silicon carbide (SiC) is an interesting material that has found application in a variety of In this book, we explore an eclectic mix of articles that highlight some new potential Dissanayake, et al., ; Evwaraye et al., ) and amorphous semiconductor materials (Kakalios & Fritzsche, ).

The main specifications of PPC are the. The microscopic disordered structures of hydrogenated amorphous silicon carbide (a-Si{sub 1−x}C{sub x}:H) layers with different carbon contents have been determined based on the correlations between the dielectric function in the ultraviolet/visible region and the local bonding states studied by high-sensitivity infrared attenuated total.

SYNTHESIS, STRUCTURE AND PROPERTIES OF NANOSIZED SILICON CARBIDE ˘ ˇ ˇ ˆ˙ ˙ ˝ ˛ ˆ˚ ˜ ˛ ˝!"!#" Received: November 05, Abstract. Features of synthesis of particles, wires, tubes, films and bulk materials based on sili-con carbide in nanocrystalline/amorphous condition are considered.

The main attention is taken to.